The EGF1C is a silicon rectifier diode with a maximum operating temperature of 175 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It features a dual terminal position and a power dissipation of up to 2 watts. The diode element is made of silicon and has a JEDEC package code of DO-214AC. It is a general purpose rectifier diode suitable for various applications.
Fairchild EGF1C technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AC |
| Pin Count | 2 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 150 |
| Power Dissipation-Max | 2 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.80 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Fairchild EGF1C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.