N-channel power MOSFET with 60V drain-source voltage and 22A continuous drain current. Features a low on-resistance of 0.0035 ohms, enabling efficient power switching. This single-element silicon FET utilizes Metal-oxide Semiconductor technology. Packaged in a TO-263AB (D2PAK) surface-mount package with 3 pins, it operates up to a maximum temperature of 175°C.
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Technical Specifications
Fairchild FDB035AN06A0 technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Pin Count
2
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.29.00.95
REACH
not_compliant
Military Spec
False
Datasheet
Fairchild FDB035AN06A0 Datasheet
Download the complete datasheet for Fairchild FDB035AN06A0 to view detailed technical specifications.
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