Fairchild
FDB12N50FTM_WS
Power Field-Effect Transistor, 11.5A I(D), 500V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3
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Technical Specifications
Fairchild FDB12N50FTM_WS technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Pin Count
2
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.29.00.95
REACH
not_compliant
Military Spec
False
Datasheet
Fairchild FDB12N50FTM_WS Datasheet
Download the complete datasheet for Fairchild FDB12N50FTM_WS to view detailed technical specifications.
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