N-channel power MOSFET featuring 500V drain-source voltage and 20A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 0.26 ohms. Encased in a TO-263AB D2PAK plastic package with 3 terminals, it is designed for high-power applications.
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Technical Specifications
Fairchild FDB20N50F technical specifications.
General
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Pin Count
3
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.29.00.95
REACH
Compliant
Military Spec
False
Datasheet
Fairchild FDB20N50F Datasheet
Download the complete datasheet for Fairchild FDB20N50F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.