N-channel power MOSFET featuring 500V drain-source voltage and 20A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 0.26 ohms. Encased in a TO-263AB D2PAK plastic package with 3 terminals, it is designed for high-power applications.
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Technical Specifications
Fairchild FDB20N50F technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Fairchild FDB20N50F Datasheet
Download the complete datasheet for Fairchild FDB20N50F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.