N-Channel Power MOSFET, featuring 35A continuous drain current and 30V drain-source voltage. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.015 ohms. Encased in a TO-252AA (DPAK-3) package, it operates up to a maximum temperature of 175°C. The single-element transistor has three terminals.
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Technical Specifications
Fairchild FDD8880 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild FDD8880 Datasheet
Download the complete datasheet for Fairchild FDD8880 to view detailed technical specifications.
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