N-Channel Power MOSFET, 500V drain-source voltage, 6.5A continuous drain current, and 0.85 ohm drain-source on-resistance. Features a single element silicon metal-oxide semiconductor field-effect transistor construction. Housed in a TO-252AA (DPAK-3) package with 3 terminals, operating up to a maximum of 150°C. ROHS compliant.
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Technical Specifications
Fairchild FDD8N50NZTM technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild FDD8N50NZTM Datasheet
Download the complete datasheet for Fairchild FDD8N50NZTM to view detailed technical specifications.
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