P-channel, dual-element silicon Metal-oxide Semiconductor FET designed for small signal applications. Features a maximum drain current of 0.6A and a drain-source voltage of 20V. Encased in an SC-70 package with 6 terminals. Operates up to a maximum temperature of 150°C.
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Technical Specifications
Fairchild FDG6306P technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 6 |
| Terminal Position | DUAL |
| Pin Count | 6 |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.21.00.95 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Fairchild FDG6306P Datasheet
Download the complete datasheet for Fairchild FDG6306P to view detailed technical specifications.
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