FDMA1024NZ

N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element JFET, offers a 5A drain current and 20V breakdown voltage. This component features a 6-terminal configuration within a compact MO-229VCCC package, measuring 2 x 2 mm with a 0.80 mm height. Designed for high-temperature operation up to 150°C, it provides dual terminal positioning for versatile integration.