
N-Channel Silicon JFET, 2.9A continuous drain current (I(D)) and 30V drain-source voltage (V(DS)). Features a 2-element configuration within a 6-terminal MICROFET-6 package (MO-229VCCC). Operates up to a maximum temperature of 150°C. This Metal-oxide Semiconductor FET is designed for small signal applications.
Fairchild FDMA2002NZ technical specifications.
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