N-Channel Silicon Metal-oxide Semiconductor FET designed for power applications. Features a continuous drain current of 12A and a drain-source voltage of 100V. Achieves a low on-resistance of 0.008 ohms. Housed in a MO-240AA package with 8 pins, offering 5 terminals in a dual configuration. Operates up to a maximum temperature of 150°C and is ROHS compliant.
Fairchild FDMS86103L technical specifications.
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