N-Channel Power MOSFET featuring 80V drain-source voltage and 19A continuous drain current. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor offers a low on-resistance of 0.0039 ohms. Designed with 8 terminals in a dual position configuration, it operates up to a maximum temperature of 150°C. ROHS compliant and housed in a POWER56 package.
Fairchild FDMS86300 technical specifications.
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