N-Channel Power MOSFET featuring 60V drain-source voltage and 32A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 0.00165 ohms. Designed with 8 pins and 5 terminals in a MO-240AA package, it operates up to a maximum temperature of 150°C.
Fairchild FDMS86550 technical specifications.
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