N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for small signal applications. Features a maximum drain current of 1.7A and a drain-source voltage of 20V. Encased in a SUPERSOT-3 package with 3 terminals, offering dual terminal positions. Operates up to a maximum temperature of 150°C.
Quick Jump:
Technical Specifications
Fairchild FDN335N technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
DUAL
Pin Count
3
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.21.00.95
REACH
Compliant
Military Spec
False
Datasheet
Fairchild FDN335N Datasheet
Download the complete datasheet for Fairchild FDN335N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.