
N-Channel Power MOSFET featuring 500V drain-source voltage and 20A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.26 ohms. Designed with a single element and three terminals, it is housed in a TO-220AB package, with TO-220F compatibility also noted. Maximum operating temperature reaches 150°C.
Fairchild FDPF20N50FT technical specifications.
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