N-Channel Silicon Metal-Oxide Semiconductor FET, a dual-element power field-effect transistor designed for high-performance applications. Features a continuous drain current of 7A and a maximum drain-source voltage of 30V, with a low on-resistance of 0.032 ohms. This SO-8 packaged component offers 8 terminals and operates up to a maximum temperature of 150°C, adhering to ROHS compliance standards.
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Technical Specifications
Fairchild FDS8984 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| Pin Count | 8 |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Fairchild FDS8984 Datasheet
Download the complete datasheet for Fairchild FDS8984 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.