N-Channel Silicon Junction Field-Effect Transistor (JFET) designed for small signal applications. Features a maximum drain current (I(D)) of 6.6A and a drain-source voltage (V(DS)) of 100V. This single-element device utilizes a Metal-Oxide-Semiconductor FET structure within a 4-terminal, dual terminal position package. Operates up to a maximum temperature of 150°C and is ROHS compliant.
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Technical Specifications
Fairchild FDT86102LZ technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Terminal Position | DUAL |
| Pin Count | 4 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild FDT86102LZ Datasheet
Download the complete datasheet for Fairchild FDT86102LZ to view detailed technical specifications.
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