N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V collector-emitter voltage (V(BR)CES) and a 120A continuous collector current (I(C)). Designed for high-power switching applications, this device operates up to a maximum junction temperature of 150°C. It is housed in a 3-terminal TO-247AB package, conforming to JEDEC standards. The single terminal position and ROHS compliant package ensure reliable integration into electronic circuits.
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Technical Specifications
Fairchild FGH60N60UFDTU technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-247AB
Pin Count
3
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.29.00.95
REACH
not_compliant
Military Spec
False
Datasheet
Fairchild FGH60N60UFDTU Datasheet
Download the complete datasheet for Fairchild FGH60N60UFDTU to view detailed technical specifications.
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