P-Channel Power MOSFET featuring 100V drain-source voltage and 22A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.125 ohms. Encased in a TO-263AB (D2PAK-3) package, it supports a maximum operating temperature of 175°C. Designed with a single element and two terminals, this discrete semiconductor is ideal for power switching applications.
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Technical Specifications
Fairchild FQB22P10TM technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Pin Count | 2 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild FQB22P10TM Datasheet
Download the complete datasheet for Fairchild FQB22P10TM to view detailed technical specifications.
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