N-Channel Power MOSFET, 100V drain-source voltage, 33A continuous drain current, and 0.055 ohm on-resistance. Features a single element silicon Metal-Oxide-Semiconductor Field-Effect Transistor construction. Packaged in a TO-263AB (D2PAK-3) surface-mount package with 2 terminals. Maximum operating temperature of 175°C.
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Technical Specifications
Fairchild FQB33N10LTM technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Pin Count | 2 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild FQB33N10LTM Datasheet
Download the complete datasheet for Fairchild FQB33N10LTM to view detailed technical specifications.
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