N-Channel Power MOSFET featuring 200V drain-source voltage and 31A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.08 ohms. Encased in a TO-263AB (D2PAK-3) package, it operates up to a maximum temperature of 150°C. Designed with a single element and two terminals, this component is ROHS compliant.
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Technical Specifications
Fairchild FQB34N20LTM technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Pin Count | 2 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild FQB34N20LTM Datasheet
Download the complete datasheet for Fairchild FQB34N20LTM to view detailed technical specifications.
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