P-channel power MOSFET featuring 500V drain-source voltage and 2.1A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 4.9 ohms. Encased in a TO-252 DPAK-3 package, it operates up to a maximum temperature of 150°C. The single-element transistor has three terminals, with a single terminal position.
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Technical Specifications
Fairchild FQD3P50TM technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild FQD3P50TM Datasheet
Download the complete datasheet for Fairchild FQD3P50TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.