N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1200V collector-emitter breakdown voltage and a 35A continuous collector current. This discrete semiconductor component is housed in a TO-247 package with three terminals, designed for single terminal position applications. It operates up to a maximum temperature of 150°C and contains a single element.
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Technical Specifications
Fairchild HGTG10N120BND technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild HGTG10N120BND Datasheet
Download the complete datasheet for Fairchild HGTG10N120BND to view detailed technical specifications.
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