N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. Features a continuous collector current of 51A and a collector-emitter breakdown voltage of 505V. Packaged in a TO-263AB (D2PAK) plastic surface-mount package with 2 terminals. Operates at a maximum junction temperature of 175°C.
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Technical Specifications
Fairchild ISL9V5045S3ST technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Pin Count | 2 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Fairchild ISL9V5045S3ST Datasheet
Download the complete datasheet for Fairchild ISL9V5045S3ST to view detailed technical specifications.
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