N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. Features a continuous collector current of 51A and a collector-emitter breakdown voltage of 505V. Packaged in a TO-263AB (D2PAK) plastic surface-mount package with 2 terminals. Operates at a maximum junction temperature of 175°C.
Quick Jump:
Technical Specifications
Fairchild ISL9V5045S3ST technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Pin Count
2
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.29.00.95
REACH
not_compliant
Military Spec
False
Datasheet
Fairchild ISL9V5045S3ST Datasheet
Download the complete datasheet for Fairchild ISL9V5045S3ST to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.