Fuji Electric
1MBH25D-120
Insulated Gate Bipolar Transistor, 38A I(C), 1200V V(BR)CES, N-Channel, TO-3PL, 3 PIN
MountingThrough Hole
PolarityN-CHANNEL
Power310W
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Technical Specifications
Fuji Electric 1MBH25D-120 technical specifications.
General
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Length | 0.807inch |
| Max Collector Current | 40A |
| Mount | Through Hole |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| RoHS Compliant | No |
| Width | 0.197inch |
Compliance
| RoHS | Not Compliant |
Datasheet
Fuji Electric 1MBH25D-120 Datasheet
Download the complete datasheet for Fuji Electric 1MBH25D-120 to view detailed technical specifications.
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