Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel
PackageModule
Power3.1kW
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Technical Specifications
Fuji Electric 1MBI400S-120 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 2.6V |
| Isolation Voltage | 2.5kV |
| Max Power Dissipation | 3.1kW |
| Power Dissipation | 3.1kW |
| RoHS Compliant | No |
| Termination | Screw |
| Weight | 0.4kg |
| Width | 108mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Fuji Electric 1MBI400S-120 Datasheet
Download the complete datasheet for Fuji Electric 1MBI400S-120 to view detailed technical specifications.
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