The Fuji Electric 1MBI400V-120-50 is a high-power insulated gate bipolar transistor with a collector emitter voltage rating of 1.2kV and a maximum collector current of 400A. It is designed for operation in temperatures up to 150°C and has a maximum power dissipation of 2.41kW. The device is mounted on a flange and has dimensions of 36mm in height, 62mm in width, and 108mm in length. The 1MBI400V-120-50 is compliant with RoHS regulations.
PackageM
MountingPanel
Quick Jump:
Technical Specifications
Fuji Electric 1MBI400V-120-50 technical specifications.
General
| Package/Case | M |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Height | 36mm |
| Length | 108mm |
| Max Collector Current | 400A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2.41kW |
| Mount | Panel |
| RoHS Compliant | Yes |
| Width | 62mm |
Compliance
| RoHS | Compliant |
Datasheet
Fuji Electric 1MBI400V-120-50 Datasheet
Download the complete datasheet for Fuji Electric 1MBI400V-120-50 to view detailed technical specifications.
No datasheet is available for this part.