Fuji Electric
1MBI600S-120
Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-4
Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-4
Package120
Power4.15kW
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Technical Specifications
Fuji Electric 1MBI600S-120 technical specifications.
General
| Package/Case | 120 |
| Isolation Voltage | 2.5kV |
| Power Dissipation | 4.15kW |
| RoHS Compliant | No |
| Weight | 500g |
Compliance
| RoHS | Not Compliant |
Datasheet
Fuji Electric 1MBI600S-120 Datasheet
Download the complete datasheet for Fuji Electric 1MBI600S-120 to view detailed technical specifications.
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