The Fuji Electric 2MBI300VN-120-50 is a high-power insulated gate bipolar transistor (IGBT) with a collector emitter breakdown voltage of 1.2kV and a maximum collector current of 300A. It is designed for use in high-power applications and has a maximum power dissipation of 1.595kW. The device is packaged in a flange mount package with dimensions of 17mm in height, 62mm in width, and 150mm in length. It operates within a temperature range of -40°C to 150°C and is not RoHS compliant.
PackageM
MountingPCB
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Technical Specifications
Fuji Electric 2MBI300VN-120-50 technical specifications.
General
| Package/Case | M |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Height | 17mm |
| Length | 150mm |
| Max Collector Current | 300A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1.595kW |
| Mount | PCB |
| RoHS Compliant | No |
| Width | 62mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Fuji Electric 2MBI300VN-120-50 Datasheet
Download the complete datasheet for Fuji Electric 2MBI300VN-120-50 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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