Fuji Electric
2SK3586-01
Power Field-Effect Transistor, 50A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220AB
MountingThrough Hole
PolarityN
Power270W
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Technical Specifications
Fuji Electric 2SK3586-01 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 73A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 30V |
| Length | 0.393inch |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 270W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Polarization | N |
| Power Dissipation | 270W |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| Threshold Voltage | 5V |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Fuji Electric 2SK3586-01 Datasheet
Download the complete datasheet for Fuji Electric 2SK3586-01 to view detailed technical specifications.
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