N-channel enhancement mode power MOSFET featuring a 900V drain-source voltage and 6A continuous drain current. This single-element transistor is housed in a TO-220F package with a through-hole mounting style and a 3-pin configuration. Key specifications include a maximum gate-source voltage of ±30V, 2500mΩ drain-source resistance at 10V, and a maximum power dissipation of 2160mW. Operating temperature range is -55°C to 150°C.
PackageTO-220F
MountingThrough Hole
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Technical Specifications
Fuji Electric 2SK4005-01MR technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220F
Package Description
Transistor Outline Package Fullpak
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
18.7
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220-F
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
900V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
6A
Maximum Drain Source Resistance
2500@10VmOhm
Typical Gate Charge @ Vgs
25@10VnC
Typical Gate Charge @ 10V
25nC
Typical Input Capacitance @ Vds
900@25VpF
Maximum Power Dissipation
2160mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCT92
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Fuji Electric 2SK4005-01MR Datasheet
Download the complete datasheet for Fuji Electric 2SK4005-01MR to view detailed technical specifications.
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