N-channel enhancement mode power MOSFET featuring a 900V drain-source voltage and 6A continuous drain current. This single-element transistor is housed in a TO-220F package with a through-hole mounting style and a 3-pin configuration. Key specifications include a maximum gate-source voltage of ±30V, 2500mΩ drain-source resistance at 10V, and a maximum power dissipation of 2160mW. Operating temperature range is -55°C to 150°C.
PackageTO-220F
MountingThrough Hole
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Technical Specifications
Fuji Electric 2SK4005-01MR technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220F |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 18.7 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220-F |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 6A |
| Maximum Drain Source Resistance | 2500@10VmOhm |
| Typical Gate Charge @ Vgs | 25@10VnC |
| Typical Gate Charge @ 10V | 25nC |
| Typical Input Capacitance @ Vds | 900@25VpF |
| Maximum Power Dissipation | 2160mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SCT92 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Fuji Electric 2SK4005-01MR Datasheet
Download the complete datasheet for Fuji Electric 2SK4005-01MR to view detailed technical specifications.
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