Fuji Electric
FMH20N60S1
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P(Q), 3 PIN
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Technical Specifications
Fuji Electric FMH20N60S1 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 600V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 140W |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
Compliance
| RoHS | Compliant |
Datasheet
Fuji Electric FMH20N60S1 Datasheet
Download the complete datasheet for Fuji Electric FMH20N60S1 to view detailed technical specifications.
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