Fuji Electric
FMV10N80E
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F(SLS), 3 PIN
PackageTO-220AB
MountingThrough Hole
PolarityN
Power235W
Quick Jump:
Technical Specifications
Fuji Electric FMV10N80E technical specifications.
General
| Package/Case | TO-220AB |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.1R |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 0.591inch |
| Length | 0.393inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Polarization | N |
| Power Dissipation | 235W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 105ns |
| Turn-On Delay Time | 34ns |
| Width | 0.177inch |
Compliance
| RoHS | Not Compliant |
Datasheet
Fuji Electric FMV10N80E Datasheet
Download the complete datasheet for Fuji Electric FMV10N80E to view detailed technical specifications.
No datasheet is available for this part.