Automotive-grade memory circuit with 32,768 words of storage. Operates across a -40°C to 125°C temperature range with a nominal supply voltage of 3.3V, supporting a range of 1.8V to 3.6V. Features an 8-terminal configuration in an R-PDSO-G8 package, measuring 3.9mm in width and 4.89mm in length. AEC-Q100 screened for reliability.
Fujitsu MB85RS256TYPNF-GS-BCERE1 technical specifications.
| Max Operating Temperature | 125 |
| Number of Terminals | 8 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G8 |
| Width | 3.9 |
| Length | 4.89 |
| Number of Functions | 1 |
| Temperature Grade | AUTOMOTIVE |
| Supply Voltage-Nom (Vsup) | 3.3 |
| Supply Voltage-Max (Vsup) | 3.6 |
| Supply Voltage-Min (Vsup) | 1.8 |
| Number of Words | 32768 |
| Number of Words Code | 32000 |
| Memory IC Type | MEMORY CIRCUIT |
| Screening Level | AEC-Q100 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Fujitsu MB85RS256TYPNF-GS-BCERE1 to view detailed technical specifications.
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