The BAV70DW is a silicon rectifier diode with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It features a dual terminal position and a maximum power dissipation of 0.2W. The diode element material is silicon and the diode type is a rectifier diode. The breakdown voltage is a minimum of 75V and the maximum reverse voltage is 75V.
Galaxy Semi-Conductor BAV70DW technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 6 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 75 |
| Breakdown Voltage-Min | 75 |
| Power Dissipation-Max | 0.2 |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Galaxy Semi-Conductor BAV70DW to view detailed technical specifications.
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