The BAW56DW is a silicon rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It has a maximum power dissipation of 0.2 watts and a reverse voltage of up to 75 volts. The diode is available in a 6-pin R-PDSO-G6 package and features a dual terminal position. It is suitable for general purpose rectification applications.
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Technical Specifications
Galaxy Semi-Conductor BAW56DW technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 6 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 75 |
| Breakdown Voltage-Min | 75 |
| Power Dissipation-Max | 0.2 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Semi-Conductor BAW56DW Datasheet
Download the complete datasheet for Galaxy Semi-Conductor BAW56DW to view detailed technical specifications.
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