The MBF10K is a 4-element silicon bridge rectifier diode with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a breakdown voltage of 800V and is packaged in a TSSOP-4 package. The diode element material is silicon and the terminal position is dual. The MBF10K is suitable for use in high-temperature applications.
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Technical Specifications
Galaxy Semi-Conductor MBF10K technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 800 |
| Breakdown Voltage-Min | 800 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Semi-Conductor MBF10K Datasheet
Download the complete datasheet for Galaxy Semi-Conductor MBF10K to view detailed technical specifications.
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