The RB715F is a dual silicon rectifier diode with a maximum operating temperature of 125 degrees Celsius. It features a breakdown voltage of 40V and a maximum power dissipation of 0.15W. The diode element material is silicon and the diode type is a rectifier diode. The device has 3 terminals and is packaged in a R-PDSO-G3 package type.
Quick Jump:
Technical Specifications
Galaxy Semi-Conductor RB715F technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 40 |
| Breakdown Voltage-Min | 40 |
| Power Dissipation-Max | 0.15 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Semi-Conductor RB715F Datasheet
Download the complete datasheet for Galaxy Semi-Conductor RB715F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.