Unidirectional transient voltage suppressor diode designed for circuit protection. Features a 6V reverse standoff voltage and a 400W peak pulse power dissipation. Operates across a wide temperature range from -55°C to 150°C. Breakdown voltage ranges from a minimum of 6.67V to a maximum of 7.37V, with a nominal value of 7.02V. Clamping voltage is rated at a maximum of 10.3V. This silicon diode offers a 2-terminal, dual terminal configuration.
PolarityUNIDIRECTIONAL
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Technical Specifications
Galaxy Semi-Conductor SMAJ6.0A technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
6
Breakdown Voltage-Min
6.67
Non-rep Peak Rev Power Dis-Max
400
Clamping Voltage-Max
10.3
Breakdown Voltage-Nom
7.02
Breakdown Voltage-Max
7.37
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
unknown
Military Spec
False
Datasheet
Galaxy Semi-Conductor SMAJ6.0A Datasheet
Download the complete datasheet for Galaxy Semi-Conductor SMAJ6.0A to view detailed technical specifications.
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