Unidirectional transient voltage suppressor diode, 600W peak pulse power, featuring an 18V reverse standoff voltage. This silicon diode offers a minimum breakdown voltage of 20V and a nominal breakdown voltage of 21.05V, with a maximum breakdown voltage of 22.1V. Maximum clamping voltage is 29.2V. Designed with two terminals in a DO-214AA (SMB) package, it operates across a temperature range of -55°C to 150°C.
PolarityUNIDIRECTIONAL
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Technical Specifications
Galaxy Semi-Conductor SMBJ18A technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
DUAL
JEDEC Package Code
DO-214AA
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
18
Breakdown Voltage-Min
20
Non-rep Peak Rev Power Dis-Max
600
Clamping Voltage-Max
29.2
Breakdown Voltage-Nom
21.05
Breakdown Voltage-Max
22.1
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
unknown
Military Spec
False
Datasheet
Galaxy Semi-Conductor SMBJ18A Datasheet
Download the complete datasheet for Galaxy Semi-Conductor SMBJ18A to view detailed technical specifications.
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