Unidirectional transient voltage suppressor diode, 600W peak pulse power, featuring an 18V reverse standoff voltage. This silicon diode offers a minimum breakdown voltage of 20V and a nominal breakdown voltage of 21.05V, with a maximum breakdown voltage of 22.1V. Maximum clamping voltage is 29.2V. Designed with two terminals in a DO-214AA (SMB) package, it operates across a temperature range of -55°C to 150°C.
PolarityUNIDIRECTIONAL
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Technical Specifications
Galaxy Semi-Conductor SMBJ18A technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 18 |
| Breakdown Voltage-Min | 20 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 29.2 |
| Breakdown Voltage-Nom | 21.05 |
| Breakdown Voltage-Max | 22.1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Semi-Conductor SMBJ18A Datasheet
Download the complete datasheet for Galaxy Semi-Conductor SMBJ18A to view detailed technical specifications.
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