GeneSiC Semiconductor (Navitas Semiconductor)
G3R45MT17D
GeneSiC G3R45MT17D Silicon Carbide (SiC) MOSFET, 1700V, 61A, 45mΩ, TO-247-3
The G3R45MT17D is a high-performance Silicon Carbide (SiC) MOSFET designed for high-voltage, high-frequency, and high-efficiency power conversion applications. It features a drain-source voltage rating of 1700V and a typical on-state resistance of 45mΩ. The device utilizes GeneSiC's third-generation (G3R) technology, providing low switching and conduction losses, high temperature stability, and a robust body diode. It is optimized for industrial applications including EV charging, solar inverters, and power supplies.
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Technical Specifications
GeneSiC Semiconductor (Navitas Semiconductor) G3R45MT17D technical specifications.
General
| Drain-Source Voltage (Vdss) | 1700V |
| Continuous Drain Current (Id) @ 25°C | 61A |
| Drain-Source On-State Resistance (Rds(on)) Typ | 45mΩ |
| Drain-Source On-State Resistance (Rds(on)) Max | 58mΩ |
| Power Dissipation (Pd) | 438W |
| Gate-Source Voltage (Vgs) Static | -5 / +15V |
| Gate-Source Voltage (Vgs) Dynamic | -10 / +20V |
| Operating Temperature (Tj) Max | 175°C |
| Total Gate Charge (Qg) | 182nC |
| Input Capacitance (Ciss) | 4523pF |
| Gate-Source Threshold Voltage (Vgs(th)) Max | 2.7V |
Compliance
| RoHS | Compliant |
| REACH | Unaffected |
Datasheet
GeneSiC Semiconductor (Navitas Semiconductor) G3R45MT17D Datasheet
Download the complete datasheet for GeneSiC Semiconductor (Navitas Semiconductor) G3R45MT17D to view detailed technical specifications.
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