The IRF9335TRPBF is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of -5.4A and a drain to source voltage of -30V. The device has a maximum power dissipation of 2.5W and is packaged in a SOIC N package. The IRF9335TRPBF is RoHS compliant and is part of the HEXFET Series.
PackageSOIC N
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF9335TRPBF technical specifications.
General
| Package/Case | SOIC N |
| Continuous Drain Current (ID) | -5.4A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 59MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 386pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -1.8V |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 9.7ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF9335TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF9335TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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