N-Channel Power MOSFET featuring 600V drain-source voltage and 27A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 220mΩ drain-source on-resistance and a maximum power dissipation of 500W. Designed for through-hole mounting in a TO-247-3 package, it boasts fast switching speeds with turn-on delay of 27ns and fall time of 38ns. Operating temperature range is -55°C to 150°C, and the component is RoHS compliant.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP27N60KPBF technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 220MR |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.7mm |
| Input Capacitance | 4.66nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Channels | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 220mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 27ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFP27N60KPBF Datasheet
Download the complete datasheet for Vishay IRFP27N60KPBF to view detailed technical specifications.
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