Synchronous SRAM chip, 72M-bit density, featuring a 21-bit address bus and 9-bit word width. Offers a maximum access time of 0.45 ns and a maximum clock rate of 450 MHz with QDR architecture. This dual-port memory is housed in a 165-pin FBGA package with a 1mm pitch, designed for surface mounting. Operates at 1.8V with a voltage range of 1.7V to 1.9V and a temperature range of 0°C to 85°C.
PackageFBGA
MountingSurface Mount
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Technical Specifications
GSI GS8662DT10BGD-450T technical specifications.
General
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | FBGA |
| Package Description | Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 165 |
| PCB | 165 |
| Package Length (mm) | 15 |
| Package Width (mm) | 13 |
| Package Height (mm) | 0.94(Max) |
| Seated Plane Height (mm) | 1.4(Max) |
| Pin Pitch (mm) | 1 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 72Mbit |
| Address Bus Width | 21bit |
| Maximum Access Time | 0.45ns |
| Timing Type | Synchronous |
| Maximum Clock Rate | 450MHz |
| Data Rate Architecture | QDR |
| Density in Bits | 75497472bit |
| Maximum Operating Current | 820mA |
| Typical Operating Supply Voltage | 1.8V |
| Number of Bits per Word | 9bit |
| Number of Ports | 2 |
| Number of Words | 8M |
| Min Operating Supply Voltage | 1.7V |
| Max Operating Supply Voltage | 1.9V |
| Min Operating Temperature | 0°C |
| Max Operating Temperature | 85°C |
| Architecture | Pipelined |
Compliance
| Cage Code | 3BKC7 |
| EU RoHS | Yes |
| HTS Code | 8542320041 |
| Schedule B | 8542320040 |
| ECCN | 3A991.b.2.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
GSI GS8662DT10BGD-450T Datasheet
Download the complete datasheet for GSI GS8662DT10BGD-450T to view detailed technical specifications.
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