Synchronous SRAM chip, 72M-bit density, featuring a 2M x 36 configuration with a 19-bit address bus. Offers a maximum access time of 0.45 ns and operates at a maximum clock rate of 200 MHz with QDR architecture. This dual-port memory operates at 1.8V, with a voltage range of 1.7V to 1.9V. Packaged in a 165-pin FBGA with a 1mm pitch, suitable for surface mounting. Operates across a temperature range of -40°C to 85°C.
PackageFBGA
MountingSurface Mount
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Technical Specifications
GSI GS8672D36AE-200I technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
165
PCB
165
Package Length (mm)
17
Package Width (mm)
15
Package Height (mm)
1.04(Max)
Seated Plane Height (mm)
1.5(Max)
Pin Pitch (mm)
1
Package Material
Plastic
Mounting
Surface Mount
Density
72Mbit
Address Bus Width
19bit
Maximum Access Time
0.45ns
Timing Type
Synchronous
Maximum Clock Rate
200MHz
Data Rate Architecture
QDR
Density in Bits
75497472bit
Typical Operating Supply Voltage
1.8V
Number of Bits per Word
36bit
Number of Ports
2
Number of Words
2M
Min Operating Supply Voltage
1.7V
Max Operating Supply Voltage
1.9V
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Architecture
Pipelined
Compliance
Cage Code
3BKC7
EU RoHS
No
HTS Code
8542320041
Schedule B
8542320040
ECCN
3A991.b.2.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
GSI GS8672D36AE-200I Datasheet
Download the complete datasheet for GSI GS8672D36AE-200I to view detailed technical specifications.
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