This DDR SRAM memory IC operates within a supply voltage range of 1.25 to 1.4 volts and features an access time of 0.4 nanoseconds. The device is packaged in a 260-pin HBGA package and is designed for use in high-speed memory applications. The memory IC is capable of storing 2097152 words and has a code capacity of 2000000 words. It is designed to operate within a temperature range of 0 to 85 degrees Celsius.
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Technical Specifications
GSI GS8673ET36BGK-500 technical specifications.
General
| Max Operating Temperature | 85 |
| Number of Terminals | 260 |
| Min Operating Temperature | 0 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B260 |
| Width | 14 |
| Length | 22 |
| Number of Functions | 1 |
| Temperature Grade | OTHER |
| Supply Voltage-Nom (Vsup) | 1.3 |
| Supply Voltage-Max (Vsup) | 1.4 |
| Supply Voltage-Min (Vsup) | 1.25 |
| Number of Words | 2097152 |
| Number of Words Code | 2000000 |
| Memory IC Type | DDR SRAM |
| Parallel/Serial | PARALLEL |
| Access Time-Max | 0.4 |
Compliance
| RoHS | Yes |
| Eccn Code | 3A991.B.2.B |
| HTS Code | 8542.32.00.41 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
GSI GS8673ET36BGK-500 Datasheet
Download the complete datasheet for GSI GS8673ET36BGK-500 to view detailed technical specifications.
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