N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V collector-emitter breakdown voltage and a 40A continuous collector current. This discrete semiconductor component is housed in a TO-247 package with three terminals, designed for single terminal positioning. It operates efficiently up to a maximum temperature of 150°C.
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Technical Specifications
Harris HGTG20N60B3D technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| REACH | unknown |
| Military Spec | False |
Datasheet
Harris HGTG20N60B3D Datasheet
Download the complete datasheet for Harris HGTG20N60B3D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.