Harris
IRF252R
Power Field-Effect Transistor, 25A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
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Technical Specifications
Harris IRF252R technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Terminal Position
BOTTOM
JEDEC Package Code
TO-204AE
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
REACH
unknown
Military Spec
False
Datasheet
Harris IRF252R Datasheet
Download the complete datasheet for Harris IRF252R to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.