Harris
IRF322
Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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Technical Specifications
Harris IRF322 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Terminal Position
BOTTOM
JEDEC Package Code
TO-204AA
Number of Elements
1
Compliance
RoHS
No
REACH
unknown
Military Spec
False
Datasheet
Harris IRF322 Datasheet
Download the complete datasheet for Harris IRF322 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.