IRF512

Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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Harris IRF512 technical specifications.

Max Operating Temperature

175

Number of Terminals

Terminal Position

SINGLE

JEDEC Package Code

TO-220AB

Number of Elements

RoHS

Eccn Code

EAR99

REACH

unknown

Military Spec

False

This datasheet cannot be embedded due to technical restrictions.