Harris
IRF820
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Technical Specifications
Harris IRF820 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Number of Elements
1
Compliance
RoHS
No
REACH
unknown
Military Spec
False
Datasheet
Harris IRF820 Datasheet
Download the complete datasheet for Harris IRF820 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.